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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1243 DESCRIPTION *With TO-3PN package *Wide area of safe operation APPLICATIONS *Audio frequency power amplifier *High frequency power amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 60 60 5 10 15 100 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1243 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=60V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=3V 50 MIN 60 60 5 1.5 2.0 50 50 TYP. MAX UNIT V V V V V A A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1243 Fig.2 outline dimensions 3 |
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